Method for stacking electronic components

ABSTRACT

A method of forming a stacked electronic component, and an electronic component formed by the method wherein the method includes:
     providing a multiplicity of electronic components wherein each electronic component comprises a first external termination and a second external termination;   providing a first lead frame plate and a second lead frame plate wherein the first lead frame plate and the second lead frame plate comprises barbs and leads;   providing a molded case comprising a cavity and a bottom; and   forming a sandwich of electronic components in an array between the first lead frame plate and the second lead frame plate with the barbs protruding towards the electronic components and the leads extending through the bottom.

BACKGROUND

The present invention is related to an improved method for formingstacked electronic components and an improved electronic componentformed thereby. More specifically, the present invention is related to amethod of forming stacked electronic components wherein the contactbetween the lead and external termination are less susceptible tothermal fluctuations as realized during assembly and use of theelectronic component.

Methods for stacking and attaching lead frames to multilayered ceramiccapacitors (MLCC) is well documented in the prior art. Even with theadvanced understanding significant challenges remain. Thermal shockresistance and temperature cycling robustness remain a challenge due tocoefficient of thermal expansion (CTE) mismatches between the lead frameand the solder materials used to attach the lead frame to the externalterminations of the MLCC. This problem is exasperated by temperaturerequirements which are increasing from the current requirements, of upto 200° C., to future requirement of 250° C. and even up to 350° C.Capacitance-stable high temperature base metal electrode (BME) MLCC'shave been developed and proven reliable at 200° C. Studies by Shaddocket. al. in “Reliability Assessment of Passives for 300° C. and 350° C.”from IMAPS High Temperature Electronics Network (HiTEN 2011) Jul. 18-20,2011, Oxford, UK, have shown promising results with a calcium zirconatebased dielectric compatible with nickel electrodes at 300° C. and 350°C. The challenge remains to find a lead attachment material that canwithstand these extreme temperatures and which allow temperature cyclingfrom −55° C. to high temperatures, exceeding 200° C., without crackingthe MLCC at the solder/MLCC end-metallization interface.

Methods for attaching multiple MLCC's in a vertical stack have beendocumented in the prior art. These methods typically involve usingsolder attachments or conductive adhesive attachments. Most conductiveadhesives degrade above 180° C. and are therefore not suitable for hightemperature applications. Welding or wire bonding may also be used toform an electrical connection, but the mechanical strength, especiallyshear strength, is low. Many of these materials cannot withstand extremetemperature, have undesirable properties at high temperatures or cannotwithstand extended cycling to extreme temperatures.

The stacking methods documented in the art typically involve a multitudeof tooling configurations in order to accommodate the various numbers ofchips in a stack to meet the capacitance need for a specificapplication. This is an expensive and inflexible process.

There is an ongoing desire to provide a method of forming stackedelectronic components, particularly stacked MLCC's which can withstandthe temperatures realized during solder reflow.

SUMMARY

It is an object of the invention to provide an improved electroniccomponent, more specifically a capacitor and even more specifically anMLCC, which is less susceptible to thermal cycle failures.

It is another object of the invention to provide an improved electroniccomponent which does not suffer from defects due to coefficient ofthermal expansion differences within the connectivity between theelectrical component and the lead.

It is a further objective of this invention to provide a hightemperature stack that does not require a lead (Pb) based interconnect.These and other advantages, as will be realized, are provided in amethod of forming a stacked electronic component comprising:

providing a multiplicity of electronic components wherein eachelectronic component comprises a first external termination and a secondexternal termination;providing a first lead frame plate and a second lead frame plate whereinthe first lead frame plate and the second lead frame plate comprisesbarbs and leads;providing a molded case comprising a cavity and a bottom; andforming a sandwich of electronic components in an array between thefirst lead frame plate and the second lead frame plate with the barbsprotruding towards the electronic components and the leads extendingthrough the bottom.

Yet another embodiment is provided in a method of forming an electronicdevice comprising:

forming a stacked electronic component by:providing a multiplicity of electronic components wherein eachelectronic component comprises a first external termination and a secondexternal termination;providing a first lead frame plate and a second lead frame plate whereinthe first lead frame plate and the second lead frame plate comprisesbarbs and leads;providing a molded case comprising a cavity and a bottom; andforming a sandwich of electronic components in an array between thefirst lead frame plate and the second lead frame plate with the barbsprotruding towards the electronic components and the leads extendingthrough the bottom;placing the stacked electronic component on a circuit board; and passingthe circuit board through an IR reflow oven, or IR/convection reflowoven, or a convection oven, or exposed to hot bar reflow or flame reflowheat sufficient to melt the low temperature metal to enhance theelectrical connection of the device.

Yet another embodiment is provided in a stacked electronic component.The stacked electronic component has a multiplicity of electroniccomponents wherein each electronic component comprises a first externaltermination and a second external termination. The electronic componentsare between a first lead frame plate and a second lead frame platewherein the first lead frame plate and said second lead frame platecomprises barbs and leads. A molded case comprising a cavity and abottom houses the electronic components and lead frame plates in asandwich in an array between the first lead frame plate and the secondlead frame plate with the barbs protruding towards the electroniccomponents and the leads extending through the bottom.

BRIEF DESCRIPTION OF FIGURES

FIG. 1 is a schematic cross-sectional view of an embodiment of theinvention.

FIG. 2 is a schematic exploded view of an embodiment of the invention.

FIG. 3 is a top perspective schematic view of an embodiment of theinvention.

FIG. 4 is a side schematic view of an embodiment of the invention.

FIG. 5 is a partial view of an embodiment of the invention.

FIG. 6 is a top perspective view of an embodiment of the invention.

FIG. 7 is a bottom perspective view of an embodiment of the invention.

FIG. 8 is a schematic exploded view of an embodiment of the invention.

DETAILED DESCRIPTION

The present invention is related to an improved method for stackingelectronic components, particularly MLCC's, and improved stackedelectronic components formed thereby. More specifically, the presentinvention is related to a stacked electronic component wherein the leadsare mechanically engaged with the external terminations of the MLCCinstead of chemically engaged such as by soldering and the like. Themechanical engagement allows the contacted parts to contract and expandduring temperature fluctuations without detriment.

The invention will be described with reference to the various figureswhich form an integral, non-limiting, part of the disclosure. Throughoutthe disclosure similar elements will be numbered accordingly.

An MLCC is illustrated in schematic cross-section in FIG. 1. In FIG. 1,the MLCC, generally represented at 10, comprises electrodes, 12, ofopposing polarity arranged in a parallel alternating pattern whereinalternate electrodes terminate at external terminations, 14, of opposingpolarity. A dielectric, 16, is between the electrodes.

The external terminations of the MLCC suitable for demonstration of theinvention are not particularly limited herein. Fired Pd/Ag with anacrylic resin over a fired Cu end metallization is particularly suitablefor use as an alternative high-temperature MLCC end metallization. FiredAg with acrylic resin over fired Cu end metallization is alsoparticularly suitable for use as an alternative high-temperature MLCCend metallization.

The external termination may comprise a fired copper thick film, anickel plated barrier layer of about 0.5 microns to about 4.0 micronsand a plated gold second layer of 0.5-2.0 microns preferably withgreater 99% purity gold. Platable silver end metallization may be usedand is most preferably used with a 0.5-4.0 micron thick nickelunderplate and a 1.0-10.0 micron thick Sn (100% Sn) or Sn/Pb platinglayer. The Sn/Pb layer may have 70/30, 90/10 or 60/40 weight percent oftin to lead. The terminations may be thick-film fired silver withsilver-palladium such as 2-30% palladium. The terminations may be formedwith cured silver-filled conductive adhesive preferably comprising about65-90% silver. The terminations may have a first fired silver or copperlayer with a thickness of about 50-270 micron and a second curedsilver-filled conductive polymer adhesive with 65-90% silver.

A multiplicity of MLCC's are taken together to form a stacked capacitorwith higher capacitance than readily available from single capacitors. Astacked capacitor of the instant invention is illustrated in explodedschematic view in FIG. 2 and in assembled view in FIG. 3. Across-sectional schematic view taken along line 4-4 of FIG. 3 isillustrated in FIG. 4.

In FIGS. 2 and 3, a 13×2 array of capacitors is illustrated. The numberof capacitors, either rows or columns, is not limited but a 13×2 array,with 26 MLCC's is illustrated for the purposes of discussion withoutlimit thereto. In FIGS. 2 and 3 each MLCC, 10, may be adhered to eachadjacent MLCC, such as by an adhesive, to form an array of MLCC's. Thearray is then inserted between lead frame plates, 18, with leads, 20,extending therefrom. The sandwich of leads and array is then insertedinto a molded case, 22, wherein the leads penetrate through the bottomand extend there through. Alternatively, the leads may be inserted intothe cavity of the molded case and the MLCC's pressed into the spacebetween the leads until the desired number of MLCC's are between theleads. Barbs, 24, which are illustrated in a cut-away schematic view inFIG. 5, extend inward towards the MLCC's from the plane of the leadframe plates and in the direction of MLCC insertion to impinge upon theexternal terminations, 14, of the MLCC's thereby forming a secureelectrical connection and inhibiting the MLCC's from moving in adirection away from the bottom of the molded case. At least one, butpreferably two or more barbs, are in contact with each MLCC. It ispreferable that the sandwich of lead frame plates and array is frictionfit into the molded case which persuades the protrusions towards theMLCC's thereby securing adequate electrical contact. In a preferredembodiment the barbs converge towards the bottom of the molded casethereby inhibiting the MLCC's from being withdrawn from the case eitheras an array or individually. After the sandwich is inserted the moldedcase is preferably sealed. A filler material, such as epoxy resin, maybe applied after the components have been inserted into the cavity toprovide a further barrier to moisture penetration and further improvemechanical integrity. In this case gasket seals may be applied to theleads prior to insertion. A particular advantage of the invention isthat the device does not require solder lead attachment of the leadframe to the external termination. The connection is mechanical betweenthe punched barbs of the lead frame plate and the MLCC termination.Since soldering is not required the CTE mismatch issues are minimizedthereby greatly improving thermal cycling robustness.

An assembled capacitor is illustrated schematically in perspective topview in FIG. 6 and in perspective bottom view in FIG. 7. In FIG. 6, thecavity, 27, extends beyond the length of the stack to facilitateinsertion of the lead from plate, 18, into the cavity. Ribs, 26, pressagainst the stack to maintain the sandwich in tight friction fitrelationship and function as stiffeners.

An embodiment of the invention is illustrated in partial exploded viewin FIG. 8. In FIG. 8, the molded case, 22, comprises a multiplicity ofcavities, 28, with partitions, 30, between the cavities. The cavitiesalso provide additional strength to the molded case. The example of FIG.8 provides three discrete capacitor stacks with each having six MLCC'sin 3×2 arrays without limit thereto. A molded top cover, 29, ispreferred to fully encase the device.

With further reference to FIG. 8, the MLCC may be substituted with othertwo-terminal electronic components of similar size such as resistors,inductors, thermistors, fuses, diodes, and varistors. Assembly may beused to stack an assortment of two-terminal electronic components ofsimilar size together in the same device in series, such as capacitorsand resistors, and may be used for applications such as filtering. In analternative embodiment electrically isolated sandwiches may haveadditional functionality. Electronic components 10, 10′ and 10″ of FIG.8, for example may represent different combinations wherein any onecavity may have only capacitors, only other two-terminal electroniccomponents or combinations thereof. Not all slots have to be filled.This has benefits for rapid prototyping and modeling in electroniccircuits and provides for more flexible assembly.

The leads preferably converge with distance from the plate, optionallyto a point, thereby allowing the leads to easily protrude through thebottom of the molded case as the lead frame plate is inserted into thecavity of the molded case.

The leads can be any lead frame material typically used for suchapplications include Alloy 42, Kovar, Phosphor bronze, Copper, BerylliumCopper, and various alloys thereof. Lead frame material of nickel-ironalloy 42, phosphor bronze alloy 510 or beryllium copper alloy 25 areparticularly suitable for demonstration of the invention. The thicknessof the lead frame plates is selected to be as thin as possible yetsufficiently thick to allow the leads to penetrate through the bottom ofthe cavity and the barbs sufficiently strong to maintain non-planaritywith the lead frame plate. A thickness of about 0.127 mm to about 0.508mm is sufficient to demonstrate the invention. The preferred embodimentis entirely Pb-free.

The barbs are preferably stamped into the lead frame. The barbspreferably protrude about 0.127-0.762 mm at a 5°-30° bend angle slopingin a downward direction towards the lead frame feet. The lead frameplate may have a plating such as a nickel plated barrier layer and aplated gold second layer. The nickel plated barrier layer can be coatedat about 1.0 to 4.0 microns and the plated gold second layer can becoated at about 0.5-2.0 microns. The plated gold second layer ispreferably >99% purity. Other high temperature plating finishes may beemployed such as Ag, Ag/Pd, Pd and Pt. For lower temperatureapplications other lead frame plating finishes may be used such as Sn,Sn/Pb, etc. Lead styles N, L, M, J, or K may be employed in the finaldevice.

The lead frames may be plated with a first nickel underplate layerhaving a thickness of at least 0.5 microns to no more than 4.0 micronand a second plating layer having a thickness at least 1.0 to no morethan 10.0 microns and comprising low melting point materials such as100% Sn, Sn/Bi, or Sn/Pb (70/30, 90/10, 60/40).

The lead frame stand-off can be minimized to have a low profile to saveboard height. Lead styles of N, L, M, J or K can be used. N style leadsare straight with a minimal length of at least 6.35 mm. L and M styleleads are formed to extend outward and typically have a length of 1.78mm±0.25 for L and 1.14 mm±0.25 for M. J and K style leads are formed toextend inward and typically have a length of 1.78 mm±0.25 for J and 1.14mm±0.25 for K.

The material of construction for the molded case is selected to be anon-conductive material which is suitable for withstanding theconditions of circuit manufacture. While not limited thereto polyimideis a particularly suitable material with polysulfone, high performancefiberglass composite such as FR4, ceramic or glass packages, or moldingcompounds particularly those with Tg greater than 175° C. for hightemperature performance also being suitable for demonstration of theinvention. The wall thickness is preferably as thin as possible with theproviso that the physical and mechanical limitations must be suitablefor a capacitor. A wall thickness of about 1.0 to about 3.5 mm issuitable for demonstration of the invention when polyimide is used asthe material of construction.

The dielectric is not particularly limited herein. The conductive platesare separated by a dielectric as well known in the art and exemplifiedin U.S. Pat. Nos. 7,211,740; 7,172,985; 7,164,573; 7,054,137; 7,068,490and 6,906,907 each of which is incorporated herein by reference.Conductive plates separated by dielectric forms a capacitor as known inthe art. While not limited thereto, a dielectric layer with a thicknessof about 0.2 μm up to about 50 μm is suitable for demonstration of theteachings herein. The number of dielectric layers stacked is generallyfrom 2 to about 500 without limit thereto. BME MLCC's using calciumzirconate-based or calcium strontium zirconate titanate-baseddielectrics are suitable for demonstration of the invention.

The conductive material which forms the internal electrodes is notcritical, although a base metal electrode (BME) is preferably used dueto cost considerations, particularly when the dielectric material of thedielectric layers has anti-reducing properties. Typical base metals arenickel, copper, titanium, tungsten, molybdenum, alloys or cermets ofbase metals or base metal alloys with nickel being preferred. Preferrednickel alloys are alloys of nickel with at least one member selectedfrom Cu, Si, Ba, Ti, Mn, Cr, Co, and Al, with such nickel alloyscontaining at least 95 wt % of nickel being more preferred. Preciousmetal electrodes (PME) can be used with the proviso that a sinteredsilver undercoat is used. Preferred precious metals include silver,palladium, gold, platinum and alloys thereof such as silver-palladiumand silver-palladium-platinum. The thickness of the internal electrodesis not particularly limited although about 0.2 μm to about 5 μm issuitable for demonstration of the teachings herein.

The multilayer ceramic chip capacitor of the present invention generallyis fabricated by forming a green chip by conventional printing andsheeting methods using pastes, firing the chip, and printing ortransferring external electrodes thereto followed by baking.

Paste for forming the dielectric layers can be obtained by mixing a rawdielectric material with an organic or aqueous vehicle. The rawdielectric material may be a mixture of oxides and composite oxides aspreviously mentioned. Also useful are various compounds which convert tosuch oxides and composite oxides upon firing. These include, forexample; carbonates, oxalates, nitrates, hydroxides, and organometalliccompounds. The dielectric material is obtained by selecting appropriatespecies from these oxides and compounds and mixing them. The proportionof such compounds in the raw dielectric material is determined such thatafter firing, the specific dielectric layer composition may be met. Rawdielectric material in a powder form having a mean particle size ofabout 0.1 to about 3 μm is suitable for demonstration of the teachingsherein. Dielectrics are well known and not limited herein.

A green chip may be prepared from the dielectric layer-forming paste andthe internal electrode layer-forming paste. In the case of deposition byprinting methods, a green chip is prepared by alternately printing thepastes onto a substrate of polyethylene terephthalate (PET), forexample, in laminar form, cutting the laminar stack to a predeterminedshape and separating it from the substrate.

Also useful is a sheeting method wherein a green chip is prepared byforming green sheets from the dielectric layer-forming paste, printingthe internal electrode layer-forming paste on the respective greensheets, and stacking the printed green sheets.

The binder is then removed from the green chip and fired. Binder removalmay be carried out under conventional conditions where the internalelectrode layers are formed of a base metal conductor such as nickel andnickel alloys.

The stacked device is placed on a circuit board to form an assembleddevice and the assembled device is passed through a heating device suchas an IR reflow oven, IR/convection reflow oven or a convection oven, orthe assembled device is exposed to hot bar reflow or flame reflow heatsufficient to melt the low temperature metal to enhance the electricalconnection of the device.

The term “direct” with reference to electrical contact is taken todefine an electrical connection between two layers with no layer therebetween. When two layers of different composition are combined a blendedlayer wherein one component diffuses into the other thereby forming anintermediate composition is considered a direct electrical connection.

Paste for forming internal electrode layers is obtained by mixing anelectro-conductive material with an organic or aqueous vehicle. Theconductive material used herein includes conductors such as conductivemetals and alloys as mentioned above and various compounds which convertinto such conductors upon firing, for example, oxides, organometalliccompounds and resinates.

A multitude of stacking configurations can be achieved with this conceptwith up to 320 electrical components being suitable. Above about 320components becomes difficult to handle in a manufacturing environmentand therefore multiple devices are preferred with 2 to 26 individualMLCC's or other electronic components stacked into one of many possibleconfigurations.

Conductive Adhesive can be added to the assembly around the protrudingbarbs to enhance electrical conductivity thus lowering ESR. A hightemperature, polyimide-based conductive adhesive may be used in hightemperature applications. The molded case provides mechanical supportand overcomes the low shear strength concerns of the prior art usingconductive adhesive.

An embodiment of this invention includes conductive adhesive as a joint.In prior art, conductive adhesive is employed as an attachment, but inpractice, the mechanical adhesion is marginal particularly with respectto higher temperature performance. This invention adds mechanicalintegrity to the device.

Example 1

Twenty six identical 2220 size MLCC's each with nominal 0.47 μFcapacitance made with calcium zirconate based dielectric compatible withnickel electrodes were stacked vertically into a FR4 base in a 13×2arrangement. Unplated lead frames were etched from phosphor-bronze alloy510½ hard material. A bending tool with a 20° bend angle was used tocreate protruding barbs, with a 10-11 mil protrusion from the base leadframe, for electrical and mechanical connection to the MLCC's. The barbswere angled downward so as to secure the MLCC's in place once they areslid into position. The capacitance, dissipation factor and insulationresistance was tested and compared to standard specification limits fora similar stack arrangement with conventionally soldered lead frames.The results are presented in Table 1 wherein the inventive capacitor isindicated to be within standard specification limits. The individualMLCC's were tested for capacitance and dissipation factor (DF) and theresults are presented in Table 2. The capacitance and DF of theassembled stack was then measured using the same twenty six MLCC'smeasured recorded in Table 2 and the results are provided in Table 3.The assembled stack had a capacitance of 1.97 micro-farads compared to1.97 micro-farads for the sum of the capacitances of the 26 individualMLCC's. The DF of the assembled stack was 0.01976% compared to 0.0076%for the average individual MLCC reading. Even though the stack DF (asexpected) is higher than the individual MLCC DF, it was well within thespecifications.

TABLE 1 Comparison Vs. Specification Limits Characteristic Spec LimitInventive Capacitance 12 +/− 10% uF 11.97 uF Dissipation Factor <0.10%0.02% Insulation Resistance >83 M-Ohm 20 G-Ohm

TABLE 2 Capacitance and DF of individual MLCC inserted into the stackSample Cap(μF) DF(%) 1 0.45450 0.006780 2 0.46299 0.006700 3 0.459700.007090 4 0.45588 0.007410 5 0.46027 0.007480 6 0.46252 0.007040 70.45691 0.007180 8 0.46655 0.006980 9 0.46071 0.006390 10 0.477330.006720 11 0.45578 0.007330 12 0.45904 0.007100 13 0.45768 0.006980 140.45029 0.007210 15 0.46005 0.007240 16 0.46062 0.007020 17 0.460930.007400 18 0.46287 0.007130 19 0.46052 0.006700 20 0.45358 0.007260 210.45580 0.007330 22 0.45954 0.006500 23 0.46750 0.006940 24 0.464640.007020 25 0.45790 0.007870 26 0.45610 0.006890 SUM 11.9702

TABLE 3 Cap and DF of assembled capacitor Sample Cap(μF) DF(%) 111.97070 0.012090 2 11.97060 0.007720 3 11.97050 0.024690 4 11.970500.034290

The invention has been described with reference to the preferredembodiments without limit thereto. One of skill in the art would realizeadditional embodiments and alterations which are within the scope of theinvention as set forth in the claims appended hereto.

Claimed is:
 1. A method of forming a stacked electronic componentcomprising: providing a multiplicity of electronic components whereineach electronic component of said electronic components comprises afirst external termination and a second external termination; providinga first lead frame plate and a second lead frame plate wherein saidfirst lead frame plate and said second lead frame plate comprises barbsand leads; providing a molded case comprising a cavity and a bottom; andforming a sandwich of said electronic components in an array betweensaid first lead frame plate and said second lead frame plate with saidbarbs protruding towards said electronic components and said leadsextending through said bottom.
 2. The method of forming a stackedelectronic component of claim 1 further comprising: forming said arrayof said electronic components prior to said forming of said sandwich. 3.The method of forming a stacked electronic component of claim 1 furthercomprising: inserting at least one of said first lead frame plate andsaid second lead frame plate in said cavity prior to forming saidsandwich.
 4. The method of forming a stacked electronic component ofclaim 1 further comprising: forming said sandwich of said electroniccomponents in said array between said first lead frame plate and saidsecond lead frame plate with said barbs protruding towards saidelectronic components; and inserting said sandwich into said cavitywherein said leads extend through said bottom.
 5. The method of forminga stacked electronic component of claim 1 wherein at least one saidelectronic component is a multilayered ceramic capacitor.
 6. The methodof forming a stacked electronic component of claim 5 wherein saidmultilayered ceramic capacitor is terminated with at least one materialselected from copper film, plated nickel and plated gold.
 7. The methodof forming a stacked electronic component of claim 5 wherein saidmultilayered ceramic capacitor comprises a base metal electrode.
 8. Themethod of forming a stacked electronic component of claim 7 wherein saidbase metal electrode comprises at least one material selected from thegroup consisting of nickel, copper, titanium, tungsten and molybdenum.9. The method of forming a stacked electronic component of claim 5wherein said multilayered ceramic capacitor comprises a precious metalelectrode.
 10. The method of forming a stacked electronic component ofclaim 11 wherein said precious metal electrode comprises a materialselected from the group consisting of silver, palladium, gold andplatinum.
 11. The method of forming a stacked electronic component ofclaim 5 wherein each said electronic component is a multilayered ceramiccapacitor.
 12. The method of forming a stacked electronic component ofclaim 5 wherein at least one said electronic component is selected fromthe group consisting of resistors, thermistors, inductors, fuses,diodes, and varistors.
 13. The method of forming a stacked electroniccomponent of claim 5 wherein said multilayered ceramic capacitorcomprises a dielectric selected from the group consisting ofcalcium-zirconate dielectrics or calcium-strontium-zirconate-titanatedielectrics or barium titanate.
 14. The method of forming a stackedelectronic component of claim 5 wherein said multilayered ceramiccapacitor has a length of at least 1 mm to no more than 100 mm.
 15. Themethod of forming a stacked electronic component of claim 14 whereinsaid multilayered ceramic capacitor has a length of at least 3 to nomore than 20 mm.
 16. The method of forming a stacked electroniccomponent of claim 1 wherein said sandwich does not comprise an adhesivebetween said electronic component and said first lead frame plate. 17.The method of forming a stacked electronic component of claim 1 furthercomprising forming a sintered silver undercoat on said lead frame plate.18. The method of forming a stacked electronic component of claim 1wherein said lead frame plates are coated with a nickel barrier layerand a gold or other high temperature-resistant plating layer (Pd/Ag, Ag,etc.)
 19. The method of forming a stacked electronic component of claim1 wherein said first lead frame plate comprises a material selected fromthe group consisting of nickel iron alloys, phosphor bronze alloys andberyllium copper alloys.
 20. The method of forming a stacked electroniccomponent of claim 1 wherein said first lead frame plate has a thicknessof between 0.1 mm-0.6 mm.
 21. The method of forming a stacked electroniccomponent of claim 1 wherein said barbs protrude at least 0.1 to no morethan 0.8 mm.
 22. The method of forming a stacked electronic component ofclaim 1 wherein said barbs are at an 5°-30° inward bend angle sloping ina downward direction towards said leads.
 23. The method of forming astacked electronic component of claim 1 wherein said molded casecomprises a material selected from the group consisting of polyimide,polysulfone, FR4, ceramic or glass.
 24. The method of forming a stackedelectronic component of claim 1 wherein said molded case comprises amaterial with a Tg of greater than 175° C.
 25. The method of forming astacked electronic component of claim 1 wherein said molded case has awall thickness of at least 1.0 mm to no more than 10 mm.
 26. The methodof forming a stacked electronic component of claim 25 wherein saidmolded case has a wall thickness of no more than 4.0 mm.
 27. The methodof forming a stacked electronic component of claim 1 comprising no morethan 320 of said electronic components.
 28. The method of forming astacked electronic component of claim 1 wherein said molded case furthercomprises internal dividers in said cavity.
 29. The method of forming astacked electronic component of claim 1 further comprising adding acover over said to fully encapsulate said electronic components.
 30. Amethod of forming an electronic device comprising: forming a stackedelectronic component by: providing a multiplicity of electroniccomponents wherein each electronic component of said electroniccomponents comprises a first external termination and a second externaltermination; providing a first lead frame plate and a second lead frameplate wherein said first lead frame plate and said second lead frameplate comprises barbs and leads; providing a molded case comprising acavity and a bottom; and forming a sandwich of said electroniccomponents in an array between said first lead frame plate and saidsecond lead frame plate with said barbs protruding towards saidelectronic components and said leads extending through said bottom;placing said stacked electronic component on a circuit board; andpassing said circuit board through an IR reflow oven, or IR/convectionreflow oven, or a convection oven, or exposed to hot bar reflow or flamereflow heat sufficient to melt the low temperature metal to enhance theelectrical connection of the device.
 31. The method of forming anelectronic device of claim 30 further comprising: forming said array ofsaid electronic components prior to said forming of said sandwich. 32.The method of forming an electronic device of claim 30 furthercomprising: inserting at least one of said first lead frame plate andsaid second lead frame plate in said cavity prior to forming saidsandwich.
 33. The method of forming an electronic device of claim 30further comprising: forming said sandwich of said electronic componentsin said array between said first lead frame plate and said second leadframe plate with said barbs protruding towards said electroniccomponents; and inserting said sandwich into said cavity wherein saidleads extend through said bottom.
 34. The method of forming anelectronic device of claim 30 wherein at least one said electroniccomponent is a multilayered ceramic capacitor.
 35. The method of formingan electronic device of claim 34 wherein said multilayered ceramiccapacitor is terminated with at least one material selected from copperfilm, plated nickel and plated gold.
 36. The method of forming anelectronic device of claim 34 wherein said multilayered ceramiccapacitor comprises a base metal electrode.
 37. The method of forming anelectronic device of claim 34 wherein said multilayered ceramiccapacitor comprises a precious metal electrode.
 38. The method offorming an electronic device of claim 37 wherein said precious metalelectrode comprises a material selected from the group consisting ofsilver, palladium, gold and platinum.
 39. The method of forming anelectronic device of claim 34 wherein each said electronic component isa multilayered ceramic capacitor.
 40. The method of forming anelectronic device of claim 34 wherein at least one said electroniccomponent is selected from the group consisting of resistors,thermistors, inductors, fuses, diodes, and varistors.
 41. The method offorming an electronic device of claim 34 wherein said multilayeredceramic capacitor comprises a dielectric selected from the groupconsisting of calcium-zirconate or calcium strontium zirconate titanateor barium titanate.
 42. The method of forming an electronic device ofclaim 34 wherein said multilayered ceramic capacitor has a length of atleast 1 mm to no more than 100 mm.
 43. The method of forming anelectronic device of claim 42 wherein said multilayered ceramiccapacitor has a length of at least 3 to no more than 20 mm.
 44. Themethod of forming an electronic device of claim 30 wherein said sandwichdoes not comprise an adhesive between said electronic component and saidfirst lead frame plate.
 45. The method of forming an electronic deviceof claim 30 further comprising forming a sintered silver undercoat onsaid MLCC.
 46. The method of forming an electronic device of claim 30wherein said lead frame plates are coated with a nickel barrier layerand a gold or other high temperature-resistant plating layer (Pd/Ag, Ag,etc.)
 47. The method of forming an electronic device of claim 30 whereinsaid first lead frame plate comprises a material selected from the groupconsisting of nickel iron alloys, phosphor bronze alloys and berylliumcopper alloys.
 48. The method of forming an electronic device of claim30 wherein said first lead frame plate has a thickness of between 0.1mm-0.6 mm.
 49. The method of forming an electronic device of claim 30wherein said barbs protrude at least 0.1 to no more than 0.8 mm.
 50. Themethod of forming an electronic device of claim 30 wherein said barbsare at an 5°-30° inward bend angle sloping in a downward directiontowards said leads.
 51. The method of forming an electronic device ofclaim 30 wherein said molded case comprises a material selected from thegroup consisting of polyimide, polysulfone, FR4, ceramic or glass. 52.The method of forming an electronic component of claim 30 wherein saidmolded case comprises a material with a Tg of greater than 175° C. 53.The method of forming an electronic device of claim 30 wherein saidmolded case has a wall thickness of at least 1.0 mm to no more than 10mm.
 54. The method of forming an electronic device of claim 53 whereinsaid molded case has a wall thickness of no more than 4.0 mm.
 55. Themethod of forming an electronic device of claim 30 comprising no morethan 320 of said electronic components.
 56. The method of forming anelectronic device of claim 30 wherein said molded case further comprisesinternal dividers in said cavity.
 57. The method of forming anelectronic device of claim 30 further comprising adding a cover oversaid to fully encapsulate said electronic components.
 58. A stackedelectronic component comprising: a multiplicity of electronic componentswherein each electronic component of said electronic componentscomprises a first external termination and a second externaltermination; a first lead frame plate and a second lead frame platewherein said first lead frame plate and said second lead frame platecomprises barbs and leads; a molded case comprising a cavity and abottom; and a sandwich of said electronic components in an array betweensaid first lead frame plate and said second lead frame plate with saidbarbs protruding towards said electronic components and said leadsextending through said bottom.
 59. The stacked electronic component ofclaim 58 wherein at least one said electronic component is amultilayered ceramic capacitor.
 60. The stacked electronic component ofclaim 59 wherein said multilayered ceramic capacitor is terminated withat least one material selected from copper film, plated nickel andplated gold.
 61. The stacked electronic component of claim 59 whereinsaid multilayered ceramic capacitor comprises a base metal electrode.62. The stacked electronic component of claim 61 wherein said base metalelectrode comprises at least one material selected from the groupconsisting of nickel, copper, titanium, tungsten and molybdenum.
 63. Thestacked electronic component of claim 62 wherein said base metalelectrode comprises nickel as an alloy with a material selected from thegroup consisting of copper, tin, barium, titanium, manganese, chromium,cobalt and aluminum.
 64. The stacked electronic component of claim 63wherein said base metal electrode comprises at least 95 wt % nickel. 65.The stacked electronic component of claim 59 wherein said multilayeredceramic capacitor comprises a precious metal electrode.
 66. The stackedelectronic component of claim 65 wherein said precious metal electrodecomprises a material selected from the group consisting of silver,palladium, gold and platinum.
 67. The stacked electronic component ofclaim 59 wherein each said electronic component is a multilayeredceramic capacitor.
 68. The stacked electronic component of claim 59wherein at least one said electronic component is selected from thegroup consisting of resistors, thermistors, inductors, fuses, diodes,and varistors.
 69. The stacked electronic component of claim 59 whereinsaid multilayered ceramic capacitor comprises a dielectric selected fromthe group consisting of calcium-zirconate dielectrics orcalcium-strontium-zirconate-titanate dielectrics or barium titanate. 70.The stacked electronic component of claim 59 wherein said multilayeredceramic capacitor has a length of at least 1 mm to no more than 100 mm.71. The stacked electronic component of claim 70 wherein saidmultilayered ceramic capacitor has a length of at least 3 to no morethan 20 mm.
 72. The stacked electronic component of claim 58 whereinsaid sandwich does not comprise an adhesive between said electroniccomponent and said first lead frame plate.
 73. The stacked electroniccomponent of claim 58 further comprising forming a sintered silverundercoat on mlcc.
 74. The stacked electronic component of claim 58wherein said lead frame plates are coated with a nickel barrier layerand a gold or other high temperature-resistant plating layer (Pd/Ag, Ag,etc.)
 75. The stacked electronic component of claim 58 wherein saidfirst lead frame plate comprises a material selected from the groupconsisting of nickel iron alloys, phosphor bronze alloys and berylliumcopper alloys.
 76. The stacked electronic component of claim 58 whereinsaid first lead frame plate has a thickness of between 0.1 mm-0.6 mm.77. The stacked electronic component of claim 58 wherein said barbsprotrude at least 0.1 to no more than 0.8 mm.
 78. The stacked electroniccomponent of claim 58 wherein said barbs are at an 5°-30° inward bendangle sloping in a downward direction towards said leads.
 79. Thestacked electronic component of claim 58 wherein said molded casecomprises a material selected from the group consisting of polyimide,polysulfone, FR4, ceramic or glass.
 80. The stacked electronic componentof claim 58 wherein said molded case comprises a material with a Tg ofgreater than 175° C.
 81. The stacked electronic component of claim 58wherein said molded case has a wall thickness of at least 1.0 mm to nomore than 10 mm.
 82. The stacked electronic component of claim 81wherein said molded case has a wall thickness of no more than 4.0 mm.83. The stacked electronic component of claim 58 comprising no more than320 of said electronic components.
 84. The stacked electronic componentof claim 58 wherein said molded case further comprises internal dividersin said cavity.
 85. The stacked electronic component of claim 58 whereina filler material is applied after insertion of said components.
 86. Thestacked electronic component of claim 85 further comprising a cover. 87.The stacked electronic component of claim 58 further comprising a cover.